A simulation of intersubband absorption in ZnO/MgxZn1−xO quantum wells with an external electric field
作者： J. Zhu , S.L. Ban , S.H. Ha
DOI: 10.1016/J.SPMI.2012.11.011
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摘要: Abstract A detailed simulation on the intersubband absorption for 1–2, 2–3, and 1–3 optical transitions in ZnO/MgxZn1−xO quantum wells is presented. The quantum-confined Stark effect induced by internal polarization field process effectively controlled through an external electric field. It easy to obtain structural optimization of light different terahertz ranges our numerical analysis. wavelengths corresponding almost all increase as applied varies from −500 kV/cm 500 kV/cm. small coefficient transition increased enhancing asymmetry quantum-well potential. present work can be extended design new optoelectronic devices based other low-dimensional structures such wires dots.
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Hidekazu Takano, Yoshio Suzuki, Akihisa Takeuchi, Sub-100 nm Hard X-Ray Microbeam Generation with Fresnel Zone Plate Optics Japanese Journal of Applied Physics. ,vol. 42, pp. L132- L134 ,(2003) , 10.1143/JJAP.42.L132
V Jovanović, D Indjin, Z Ikonić, V Milanović, J Radovanović, Design of GaN/AlGaN quantum wells for maximal intersubband absorption in 1.3<λ<2 μm wavelength range Solid State Communications. ,vol. 121, pp. 619- 624 ,(2002) , 10.1016/S0038-1098(02)00036-4
M. Belmoubarik, K. Ohtani, H. Ohno, Intersubband transitions in ZnO multiple quantum wells Applied Physics Letters. ,vol. 92, pp. 191906- ,(2008) , 10.1063/1.2926673
Ü Özgür, Ya I Alivov, Chunli Liu, A Teke, MA Reshchikov, S Doğan, V Avrutin, S-J Cho, H Morkoc, None, A comprehensive review of ZnO materials and devices Journal of Applied Physics. ,vol. 98, pp. 041301- ,(2005) , 10.1063/1.1992666
X. G. Guo, Z. Y. Tan, J. C. Cao, H. C. Liu, Many-body effects on terahertz quantum well detectors Applied Physics Letters. ,vol. 94, pp. 201101- ,(2009) , 10.1063/1.3134485
Norio Iizuka, Kei Kaneko, Nobuo Suzuki, Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy Applied Physics Letters. ,vol. 81, pp. 1803- 1805 ,(2002) , 10.1063/1.1505116
Junqiao Wu, When group-III nitrides go infrared: New properties and perspectives Journal of Applied Physics. ,vol. 106, pp. 011101- ,(2009) , 10.1063/1.3155798
C. Morhain, X. Tang, M. Teisseire-Doninelli, B. Lo, M. Laügt, J.-M. Chauveau, B. Vinter, O. Tottereau, P. Vennéguès, C. Deparis, G. Neu, Structural and electronic properties of ZnMgO/ZnO quantum wells Superlattices and Microstructures. ,vol. 38, pp. 455- 463 ,(2005) , 10.1016/J.SPMI.2005.08.055
Mitsuaki Yano, Kazuyuki Hashimoto, Kazuya Fujimoto, Kazuto Koike, Shigehiko Sasa, Masataka Inoue, Yasutomo Uetsuji, Tomoyuki Ohnishi, Katsuhiko Inaba, Polarization-induced two-dimensional electron gas at Zn1−xMgxO/ZnO heterointerface Journal of Crystal Growth. ,vol. 301, pp. 353- 357 ,(2007) , 10.1016/J.JCRYSGRO.2006.11.114
Nobuo Suzuki, Norio Iizuka, Kei Kaneko, Calculation of Near-Infrared Intersubband Absorption Spectra in GaN/AlN Quantum Wells Japanese Journal of Applied Physics. ,vol. 42, pp. 132- 139 ,(2003) , 10.1143/JJAP.42.132