A 25 dBm Outphasing Power Amplifier With Cross-Bridge Combiners
作者： Lei Ding , Joonhoi Hur , Aritra Banerjee , Rahmi Hezar , Baher Haroun
DOI: 10.1109/JSSC.2015.2403316
关键词:
摘要: In this paper, we present a 25 dBm Class-D outphasing power amplifier (PA) with cross-bridge combiners. The PA is designed in standard 45 nm process while the combiner implemented on board using lumped elements for flexibilities testing. Comparing conventional non-isolated combiners, of are carefully chosen so that additional resonance network formed to reduce out-of-phase current, thereby increasing backoff efficiency PA. proposed manufactured and measured at both 900 MHz 2.4 GHz. It achieves 55% peak power-added (PAE) 45% GHz single tone input. For 10 LTE signal 6 dB PAR, PAE 32% −39 dBc adjacent channel ratio (ACPR) 22% −33 ACPR. With digital predistortion (DPD), linearity improved further reach −53 dBc, −50 −42 ACPR MHz, 20 2-carrier signals.
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