Dielectric Relaxor and Conductivity Mechanism in Fe-Substituted PMN-32PT Ferroelectric Crystal
作者： Xiaojuan Li , Xing Fan , Zengzhe Xi , Peng Liu , Wei Long
DOI: 10.3390/CRYST9050241
关键词:
摘要: Fe-substituted PMN-32PT relaxor ferroelectric crystals were grown by a high-temperature flux method. The effects of charged defects on the dielectric and conductivity mechanism discussed in detail. crystal showed high coercive field (Ec = 765 V/mm), due to domain wall-pinning, induced defect dipoles. Three anomaly peaks observed, two relaxation at low temperature associated with diffusion phase transition, while one resulted from short-range hopping oxygen vacancies. At T ≤ 150 °C, dominating conduction carriers electrons coming first ionization For range 200 500 was composed bulk interface between sample electrode, vacancies suggested be mechanism. Above 550 trapped Ti3+ center excited played major role electrical conduction. Our results are helpful for better understanding relationship
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