作者: Yawei Lv , Sheng Chang , Hao Wang , Jin He , Qijun Huang
DOI: 10.1016/J.CARBON.2016.01.091
关键词:
摘要: A detailed simulation study of the graphene antidot nanoribbon (GANR) and its corresponding MOSFET characteristics is shown in this paper. The research uncovers that the GANR's energy gap (E g) is continuously tunable by its topography parameters, such as the ribbon's width, the antidot density and the antidot size. At the same ribbon width, the E g of GANR can be tuned flexibly, while it is only a fixed value in GNR. Owing to these flexible E g regulations, device applications based on GANRs could be more widely used …