2.5-THz GaAs monolithic membrane-diode mixer
作者： P.H. Siegel , R.P. Smith , M.C. Graidis , S.C. Martin
DOI: 10.1109/22.763161
关键词:
摘要: A novel GaAs monolithic membrane-diode (MOMED) structure has been developed and implemented as a 2.5-THz Schottky diode mixer. The mixer blends conventional machined metallic waveguide with micromachined circuitry to form, for the first time, robust, easily fabricated, assembled room-temperature planar receiver at frequencies above 2 THz. Measurements of performance, in air, yield T/sub receiver/ 16500-K double sideband (DSB) 8.4-GHz intermediate frequency (IF) using 150-K commercial Miteq amplifier. conversion loss (diplexer through IF amplifier input) measures 16.9 dB yielding derived "front-end" noise temperature below 9000-K DSB 2514 GHz. Using CO/sub 2/-pumped methanol far-infrared laser local oscillator 2522 GHz, injected via Martin-Puplett diplexer, required power is /spl ap/5 mW optimum pumping can be reduced less than 3 15% increase noise. Although demonstrated simple submillimeter-wave mixer, all-GaAs membrane that suited wide variety low-loss high-frequency radio-frequency circuits.
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