作者: Y. Hoshi , Y. Kubota , H. Onodera , H. Shinozaki , H. Shimizu
DOI: 10.1063/1.365528
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摘要: Deposition of c-axis perpendicularly oriented barium ferrite (BaM:BaFe12O19) thin films was attempted by means an alternate periodic deposition S (spinel Fe3O4) and R (BaO⋅3Fe2O3) layers. The period the layers fixed at 1.15 nm, which corresponds to hexagonal crystals in direction. Films 115 nm thick were deposited on a ZnO underlayer using dc sputtering system with three facing target sources. This layer method expected deposit film much better crystallite orientation lower substrate temperature than needed when conventional sputter (i.e., stoichiometric BaM sintered target). temperatures above 540 °C had crystal structure showed orientation, but this did not result marked reduction for hex...