Super self-aligned double-gate (SSDG) MOSFETs utilizing oxidation rate difference and selective epitaxy

摘要: We propose a new super self-aligned double-gate MOSFET structure to implement "ideal" CMOS devices. Only one gate mask is used define both top and bottom gates, so perfectly aligned obtained. Oxidation rate difference selective epitaxy are utilized the process sequence explained briefly. Device simulation results for show high current level good GIDL characteristics. Good experimental obtained in key steps fabricate structure.