作者: Alhalaili , Bunk , Vidu , Islam
DOI: 10.3390/NANO9091272
关键词:
摘要: In the last few years, interest in use of gallium oxide (Ga2O3) as a semiconductor for high power/high temperature devices and UV nano-sensors has grown. Ga2O3 an enormous band gap 4.8 eV, which makes it well suited applications harsh environments. this work, we explored effect Ag thin film catalyst to grow oxide. The growth nanowires can be achieved by heating oxidizing pure at temperatures (~1000 °C) presence trace amounts oxygen. We present results structural, morphological, elemental characterization β-Ga2O3 nanowires. addition, explore compare sensing properties detection. proposed process optimized scale production nanocrystalline By using catalyst, control parameters obtain either or