Low resistance contact between integrated circuit metal levels and method for same

摘要: A method of forming a direct, copper-to-copper, connection between levels in an IC is disclosed. via interconnection formed by isotropically depositing barrier material through insulator to lower copper level, and then anisotropically etching the remove covering level. The anisotropic etch leaves lining insulator. subsequently deposited upper metal level directly contacts when filled. dual damascene trench non-conductive bottom. Then from interconnect As above, conductive trench/via structure, etched insulating material, via, remains. An structure made accordance with above described methods, are also provided.