A logarithmic low dark current CMOS pixel

作者: Alessandro Michel Brunetti , Bhaskar Choubey

DOI: 10.1117/12.2227795

关键词:

摘要: High dynamic range pixels are required in a number of automotive and scientific applications. CMOS provide different approaches to achieve this. However, these suffer from poor performance under low light conditions due inherently high leakage current that is present processes, also known as dark current. The typical approach reduce this involves process modifications. Nevertheless, energy considerations suggest the will be close zero at voltage on photodiode. Hence, reduction can achieved by forcing across In paper, novel logarithmic pixel design capable reducing without any modifications proposed. This able produce wide response. circuit utilizes two mirrors force in-pixel photodiode voltage. Additionally, bias used higher order effect Drain Induced Barrier Lowering (DIBL). fact, contribution compensated increasing body effect. we studied consequences negative applied mirror pair compensate for DIBL thereby achieving very small drop consequently, sensitivity conditions.

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