CMOS image sensor: Process impact on dark current

摘要: Dark current is a major concern for the CMOS Image sensor. If Shockley-Read-Hall generation creates this current, origin of defects multiple. Metallic contaminants cause deep level bulk defects, gives blemish pixels. The interface states generate mean dark pixel. good use Forming Gas anneal needed to passivate these interfaces. Next, all plasma processes have be optimized not dissociate passivation, because UV and electric field created by plasma. Finally, some process improvements, or choice p-type pixel with holes collection, should give robust image sensors low controlled current.