摘要: It has been always biggest issues to reduce dark current and white blemish in image sensor development. For this purpose, various analysis methods gettering have developed.
K. Itonaga, K. Mizuta, T. Kataoka, M. Yanagita, H. Ikeda, H. Ishiwata, Y. Tanaka, T. Wakano, Y. Matoba, T. Oishi, R. Yamamoto, S. Arakawa, J. Komachi, M. Katsumata, S. Watanabe, S. Saito, T. Haruta, S. Matsumoto, K. Ohno, T. Ezaki, T. Nagano, T. Hirayama, Extremely-low-noise CMOS Image Sensor with high saturation capacityinternational electron devices meeting. ,(2011) , 10.1109/IEDM.2011.6131511