2D-subbands in III–V and narrow-gap semiconductors

作者: Y. Takada , K. Arai , Y. Uemura

DOI: 10.1007/3-540-11191-3_16

关键词:

摘要: Theoretical calculations of 2D-subband are made for n-channel InSb in comparison with the observed carrier concentrations each subband, cyclotron masses and optical absorption spectra. The similar also Hg1−xCdxTe. physical back grounds results discussed emphasizingly.

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