Hartree Approximation for the Electronic Structure of ap-Channel Inversion Layer of Silicon M. O. S.
作者： Fusayoshi J. Ohkawa , Yasutada Uemura
DOI: 10.1143/PTPS.57.164
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摘要: … Hartree approximation. The calculations are carried out only at T =0 K and in the absence of a magnetic fieid. Following the approximation … in the Hartree approximation can be expected …
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