Electron states in semiconductor quantum dots

摘要: In this work, the electronic structures of quantum dots (QDs) nine direct band gap semiconductor materials belonging to group II-VI and III-V families are investigated, within empirical tight-binding framework, in effective bond orbital model. This methodology is shown accurately describe these systems, yielding, at same time, qualitative insights into their properties. Various features bulk structure such as band-gaps, curvature, widths around symmetry points affect confinement electrons holes. These effects identified quantified. A comparison with experimental data yields good agreement calculations. theoretical results would help quantify optical response QDs provide useful input for applications.