WET TREATMENT METHOD FOR SEMICONDUCTOR WAFER

摘要: PURPOSE:To restrain the influence of oxygen and prevent generation a natural oxide film on surface wafer, by performing wet treatment processes wafer such as etching, washing, drying in vacuum vessel, taking-out substituted inert gas atmosphere. CONSTITUTION:A carrier 3 accommodating wafers 2 to be treated is mounted treating vessel 4. Firstly inside 1 vacuumized, innert gas, thereby returning normal pressure state. Also after returned state, performed using various kinds solution, while purging continued. After final washing 2, again vacuumized; performed, pulled up from 4, are dried.