Data and modeling of negative ion transport in gases of interest for production of integrated circuits and nanotechnologies

摘要: Abstract We review techniques to prepare, evaluate and apply sets of cross section transport data for negative ions that are required the modeling collisional non-equilibrium plasmas used processing microelectronic circuits. collect discuss coefficients sets. have compiled in CF 4 -related rare gases. In addition, we consider F − 3 Furthermore, analyze sections halogen gases other molecules. This is followed by SF 6 related The scattering O 2 has been derived from make calculations properties. Finally give a brief discussion availability H . several cases but basic aim show features coefficients. particular need represent properly some details such as non-conservative nature anisotropy diffusion. Application approximate theories representations also discussed.