Workshop on atomic and molecular collision data for plasma modelling: database needs for semiconductor plasma processing
作者： Toshiaki Makabe , Tetsuya Tatsumi
DOI: 10.1088/0963-0252/20/2/024014
关键词:
摘要: The process time for semiconductor fabrication has a great influence on both the gas phase and material surface. We have to consider two specific phenomena when we simulate, predict or design plasma materials. One is temporal change in structure function through feed molecules, other surface morphology. On hand, competition among etching, deposition charging caused by active ions neutral radicals incident show discuss present stage of database etching employed manufacturing.
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