Absorption enhancement in nanotextured solar cells with Ge/Si heterostructures

摘要: Efficient light absorption is required to improve the efficiency of Ge/Si quantum dot solar cells. Here, we numerically investigate impact double-sided photonic nanostructures on near-infrared utilizing heterostructures. Extended in region requires bottom with an increased period compared those Si films no Ge layer. The nanostructure developed here demonstrates both reduced reflection visible and transmission region, enhancing photocurrent up 41.7 mA/cm2. Although Yablonovitch limit 100-nm-thick layer allows sufficient more than 80% 1100–1500 nm range be used, further optimization our necessary for this reached.