Sol-gel derived Al and Ga co-doped ZnO thin films: An optoelectronic study
作者： Reza Ebrahimifard , Mohammad Reza Golobostanfard , Hossein Abdizadeh
DOI: 10.1016/J.APSUSC.2013.11.062
关键词:
摘要: Abstract Al and Ga co-doped ZnO (AGZO) thin films with different doping contents of 0.5–4 at.% were synthesized via sol–gel route using dip coating method the results compared to single doped specimens Al:ZnO (AZO) Ga:ZnO (GZO). All samples highly transparent in visible region (T > 85%) band gap values around 3.3 eV. Introduction crystal structure decreased crystallinity reduced particle size films. Electrical resistivity was investigated engineered this study as main parameter. Single showed reduction un-doped ZnO. In regard, more efficient than decreasing electrical resistivity. Furthermore, 1 at.% minimum amount Co-doping performed two approaches including variable content (Al + Ga ≠ cte) constant (Al + Ga = 0.5, 1, 2 at.%) for sake comparison samples. Samples Al = 1 at.% Ga = 1 at.% lowest AGZO former approach. However, latter approach obtained Al + Ga = 2 at.% sample. The proved capability optoelectronic industry regarding partially substitution expensive obtaining conductive lower conventional AZO also achieving commercial advantages costly GZO
harvard.edu
elsevier.com
sci-hub.se 参考文章(27)
Yoji Imai, Akio Watanabe, Isao Shimono, Comparison of electronic structures of doped ZnS and ZnO calculated by a first-principle pseudopotential method Journal of Materials Science: Materials in Electronics. ,vol. 14, pp. 149- 156 ,(2003) , 10.1023/A:1022301907161
M. H. Yoon, S. H. Lee, H. L. Park, H. K. Kim, M. S. Jang, Solid solubility limits of Ga and Al in ZnO Journal of Materials Science Letters. ,vol. 21, pp. 1703- 1704 ,(2002) , 10.1023/A:1020841213266
Ümit Özgür, Hadis Morkoç, Zinc Oxide: Fundamentals, Materials and Device Technology ,(2009)
Tao Wang, Yanmei Liu, Qingqing Fang, Mingzai Wu, Xia Sun, Fei Lu, Low temperature synthesis wide optical band gap Al and (Al, Na) co-doped ZnO thin films Applied Surface Science. ,vol. 257, pp. 2341- 2345 ,(2011) , 10.1016/J.APSUSC.2010.09.100
Tetsuya Yamamoto, Hiroshi Katayama-Yoshida, Physics and control of valence states in ZnO by codoping method Physica B-condensed Matter. ,vol. 302, pp. 155- 162 ,(2001) , 10.1016/S0921-4526(01)00421-5
Zhan Yang, Yuan-Yuan Shi, Xi-Lian Sun, Hong-Tao Cao, Huan-Ming Lu, Xu-Dong Liu, The competition growth of ZnO microrods and nanorods in chemical bath deposition process Materials Research Bulletin. ,vol. 45, pp. 474- 480 ,(2010) , 10.1016/J.MATERRESBULL.2009.11.005
J.G. Lu, L.P. Zhu, Z.Z. Ye, F. Zhuge, Y.J. Zeng, B.H. Zhao, D.W. Ma, Dependence of properties of N Al codoped p-type ZnO thin films on growth temperature Applied Surface Science. ,vol. 245, pp. 109- 113 ,(2005) , 10.1016/J.APSUSC.2004.09.112
T Yamamoto, Codoping for the fabrication of p-type ZnO Thin Solid Films. ,vol. 420, pp. 100- 106 ,(2002) , 10.1016/S0040-6090(02)00655-7
Dirk Ehrentraut, Hideto Sato, Yuji Kagamitani, Hiroki Sato, Akira Yoshikawa, Tsuguo Fukuda, Solvothermal growth of ZnO Progress in Crystal Growth and Characterization of Materials. ,vol. 52, pp. 280- 335 ,(2006) , 10.1016/J.PCRYSGROW.2006.09.002
V. Khranovskyy, U. Grossner, V. Lazorenko, G. Lashkarev, B.G. Svensson, R. Yakimova, Conductivity increase of ZnO:Ga films by rapid thermal annealing Superlattices and Microstructures. ,vol. 42, pp. 379- 386 ,(2007) , 10.1016/J.SPMI.2007.04.073