Dependence of properties of N Al codoped p-type ZnO thin films on growth temperature
作者： J.G. Lu , L.P. Zhu , Z.Z. Ye , F. Zhuge , Y.J. Zeng
DOI: 10.1016/J.APSUSC.2004.09.112
关键词:
摘要: Abstract N–Al codoped p-type ZnO thin films have been realized by dc reactive magnetron sputtering in N2O ambient. Hall measurement, X-ray photoelectron spectroscopy, diffraction and optical transmission were carried out to investigate the effect of growth temperature on properties films. Results indicated that with good structural, electrical can only be obtained at an intermediate region (e.g., 500 °C). The had lowest resistivity 57.3 Ω cm, a carrier concentration up 2.52 × 1017 cm−3. In addition, film deposited 500 °C was crystallinity (0 0 2) preferential orientation, high transmittance about 90% visible region.
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J LU, p-type ZnO films deposited by DC reactive magnetron sputtering at different ammonia concentrations Materials Letters. ,vol. 57, pp. 3311- 3314 ,(2003) , 10.1016/S0167-577X(03)00054-5
L. G. Wang, Alex Zunger, Cluster-doping approach for wide-gap semiconductors: the case of p-type ZnO. Physical Review Letters. ,vol. 90, pp. 256401- ,(2003) , 10.1103/PHYSREVLETT.90.256401
Dengyuan Song, Armin G. Aberle, James Xia, Optimisation of ZnO:Al films by change of sputter gas pressure for solar cell application Applied Surface Science. ,vol. 195, pp. 291- 296 ,(2002) , 10.1016/S0169-4332(02)00611-6
Todd A. Cleland, D. W. Hess, Diagnostics and Modeling of N 2 O RF Glow Discharges Journal of The Electrochemical Society. ,vol. 136, pp. 3103- 3111 ,(1989) , 10.1149/1.2096409
Tetsuya Yamamoto, Hiroshi Katayama, Yoshida, Solution Using a Codoping Method to Unipolarity for the Fabrication of p-Type ZnO Japanese Journal of Applied Physics. ,vol. 38, pp. L166- L169 ,(1999) , 10.1143/JJAP.38.L166
M Chen, X Wang, Y.H Yu, Z.L Pei, X.D Bai, C Sun, R.F Huang, L.S Wen, X-ray photoelectron spectroscopy and auger electron spectroscopy studies of Al-doped ZnO films Applied Surface Science. ,vol. 158, pp. 134- 140 ,(2000) , 10.1016/S0169-4332(99)00601-7
K. Nakahara, H. Takasu, P. Fons, A. Yamada, K. Iwata, K. Matsubara, R. Hunger, S. Niki, Growth of N-doped and Ga+N-codoped ZnO films by radical source molecular beam epitaxy Journal of Crystal Growth. ,vol. 237, pp. 503- 508 ,(2002) , 10.1016/S0022-0248(01)01952-2
Paul W. Wang, Shixian Sui, Wensheng Wang, William Durrer, Aluminum nitride and alumina composite film fabricated by DC plasma processes Thin Solid Films. ,vol. 295, pp. 142- 146 ,(1997) , 10.1016/S0040-6090(96)09270-X
D.C. Look, D.C. Reynolds, J.R. Sizelove, R.L. Jones, C.W. Litton, G. Cantwell, W.C. Harsch, Electrical properties of bulk ZnO Solid State Communications. ,vol. 105, pp. 399- 401 ,(1998) , 10.1016/S0038-1098(97)10145-4
Kazunori Minegishi, Yasushi Koiwai, Yukinobu Kikuchi, Koji Yano, Masanobu Kasuga, Azuma Shimizu, Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition Japanese Journal of Applied Physics. ,vol. 36, pp. 1453- 1455 ,(1997) , 10.1143/JJAP.36.L1453