A computational investigation of nickel (silicides) as potential contact layers for silicon photovoltaic cells
作者： Keith T Butler , John H Harding
DOI: 10.1088/0953-8984/25/39/395003
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摘要: Nickel has been proposed as a low-cost alternative to silver for contacting in high-performance solar cells. at crystalline silicon surface can form number of silicide phases, depending on fabrication conditions. Using density functional theory calculations we calculate the Schottky barrier height (SBH) different possible interfaces. Depending phase, crystallographic orientation and doping SBH interface with Si range from 0.39 0.70 eV. These demonstrate which nickel (silicide) phases have potential use materials based Furthermore, explain origin tuning effect P dopant atoms being due dipole formed interface, demonstrating linear relationship between charge transfer upon concomitant modulation SBH.
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