Synthesis of nano-crystalline germanium carbide using radio frequency magnetron sputtering
作者： Neeti Gupta , Binesh Puthen Veettil , Hongze Xia , Siva Krishna Karuturi , Gavin Conibeer
DOI: 10.1016/J.TSF.2015.09.014
关键词:
摘要: Abstract Nano-crystalline Ge x C 1 − x is a potential third generation solar cell absorber material due to its favourable opto-electronic properties and relatively high abundance of elements. The ability grow nano-crystalline in large areas by an industry-friendly process can enhance scope as photovoltaic absorber. In this work thin films have been grown on Si (100) substrate using radio frequency magnetron sputtering. crystallinity, composition, structure optical the were determined by, X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, atomic force microscopy, transmission electron microscopy (TEM) ultra-violet visible infrared spectroscopy. From TEM results it was found that crystals scattered film with d-spacing 3.4 nm between fringes (calculated a = 5.53 A), but small number nanoparticles GeC present. signature local Ge–C mode identified near 530 cm − 1 at 350 °C. band gap energy value estimated be 0.90 eV from reflectance spectra. Maximum 15.5% deposited 350 °C XPS fitting.
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