作者: J. Liu , X.F. Fan , C.Q. Sun , W. Zhu
DOI: 10.1016/J.CPLETT.2016.02.033
关键词:
摘要: Abstract We examined the effect of group-IVA doping on electronic structure and transmittance ZnO using first-principle calculations. All these doped materials are found to perform n -type conductive behavior. Si-doped Pb-doped have larger optical band gap than those Ge-doped Sn-doped ZnO. The is be high in both UV visible region. enhancement region can attributed enhanced gap, while reduction due intraband transition.