Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction

摘要: Advanced structural characterisation techniques which are rapid to use, non-destructive and structurally definitive on the nanoscale in demand, especially for a detailed understanding of extended-defects their influence properties materials. We have applied electron backscatter diffraction (EBSD) technique scanning microscope non-destructively characterise quantify antiphase domains (APDs) GaP thin films grown different (001) Si substrates with offcuts. were able image APDs by relating asymmetrical intensity distributions observed EBSD patterns acquired experimentally comparing same dynamical simulations. Additionally mean angular error maps also plotted using automated cross-correlation based approaches APDs. Samples 4° offcut from [110] do not show any APDs, whereas samples exactly oriented contain The procedures described our work can be adopted characterising wide range other material systems possessing non-centrosymmetric point groups.