ENSEMBLE MONTE CARLO SIMULATION OF SUBMICRON GaAs TRANSISTORS INCLUDING PAULI EXCLUSION PRINCIPLE
作者： Yoshinori YAMADA , Yoshiaki MATSUGUMA , Toshimitsu KOURA
DOI: 10.1016/B978-0-444-88864-8.50160-6
关键词:
摘要: The ensemble Monte Carlo simulation has been carried out for submicron GaAs MESFETs. It takes into account the Pauli exclusion principles. Simplified algorithms are proposed in order to reduce an amount of CPU memory required simulation. Fundamental influences degeneracy on electron transport and device performances described. results compared with experiments 0.32μm gate-length current-voltage characteristics.
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