Electron scattering by ionized impurities in semiconductors
作者： D. Chattopadhyay , H. J. Queisser
DOI: 10.1103/REVMODPHYS.53.745
关键词:
摘要: Theories of electron scattering by ionized impurities in semiconductors are reviewed. The early foundations based on the Born approximation and their subsequent refinements discussed thoroughly. phase-shift method which is not restricted to also presented. situation heavily doped described. theories then compared critically with experiments. Finally, conclusions drawn some plausible lines future work outlined.
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