FE Based Thermal Analysis of Void Effect in IGBT Mechanical Module
作者： Xiao Ling Zhang , Wei Hua Gong , Jian Zhang , Xin Yu Fang
DOI: 10.4028/WWW.SCIENTIFIC.NET/AMR.548.415
关键词:
摘要: In this paper, a reasonable model under the thermal void effect of Insulate Gate Bipolar Transistor is been built. Finite element analysis (FE) introduced to analyze characteristics model. The results indicate that heat distribution IGBT determined voids with different sizes, positions and intensity. Besides, synergy coupling would significantly increase temperature chip.
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