HgCdTe 128×128 infrared focal plane arrays on alternative substrates of CdZnTe/GaAs/Si

摘要: High quality p‐on‐n heterojunction infrared detectors have been fabricated using controllably doped HgCdTe grown by liquid phase epitaxy on CdZnTe/GaAs/Si alternative substrates metalorganic chemical vapor deposition and used to demonstrate the first 128×128 focal plane array these materials. Detectors with a cutoff wavelength of 6.0 μm resistance‐area product R0 Aj average 6.0×104 Ω cm2 at 80 K for 16 189 in were achieved, operating temperatures above approximately 120 comparable performance co‐fabricated standard lattice‐matched bulk CdZnTe substrates. Below K, detector was limited excess generation‐recombination current, probably caused higher threading dislocation density compared that