SEMICONDUCTOR MULTILAYER FILM, SURFACE EMISSION SEMICONDUCTOR LASER AND PHOTODETEDCTING ELEMENT

摘要: PROBLEM TO BE SOLVED: To form a semiconductor multilayer film mirror of high reflectance and an antireflection low with less number pairs when using for surface emission laser photodetecting element. SOLUTION: In 104, AlAs refractive index layers 102 InGaNAs 103, whose thickness are quarter about 1.5μm optical wavelength, alternately formed on GaAs substrate 101. For the growth 104 like this, MOCVD or MBE is adequate, and, this is, since it has large difference in index, as (for example, 99.9%) than half those material conventional InP substrate, smaller 80% AlAs/GaAs group materials substrate.