Light emitting devices with layered III-V semiconductor structures, and modules and systems for computer, network and optical communication, using such device
作者： Naoto Jikutani , Shunichi Sato , Takashi Takahashi
DOI:
关键词: Optics 、 Semiconductor 、 Optoelectronics 、 Materials science 、 Cladding (fiber optics) 、 Lattice (order) 、 Quantum well 、 Optical communication 、 Light emitting device 、 Critical thickness
摘要: A semiconductor light emitting device is disclosed, including a substrate, an active region comprising strained quantum well layer, and cladding layer for confining carriers emissions, wherein the amount of lattice strains in excess 2% against either substrate or and, alternately, thickness critical calculated after Matthews Blakeslee.
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