Semiconductor laser system
作者： 博英 倉掛 , 徹 内田 , Hirohide Kurakake , Toru Uchida
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摘要: PURPOSE: To suppress the increase in a threshold current while minimizing temperature dependance of relation to title III-V group semiconductor laser system l.3μm band or 1.5μm oscillation wavelength. CONSTITUTION: The is provided with an active layer 15 comprising Inlays having composition lattice constant giving wavelength 1.3μm l.5μm, layers 14, 16 holding apply strain by near that GaAs ratio end discontinuity ΔEv valence electron ΔEc conductive increased between and 16. COPYRIGHT: (C)1995,JPO
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