Optical semiconductor device
作者： Nobuo c , Yuzo c , o Intell. Property Div. Hirayama , o Intell. Property Div. Suzuki , Masaaki c
DOI:
关键词:
摘要: A semiconductor laser of multiple quantum well structure includes a active layer (32) having In x Ga 1-x As (0 < ≦ 1), first p-type clad (33) which is formed on the and lattice-matches with InP, second (37) higher acceptor concentration than (33). The set to be not more 2 10¹⁷ cm⁻³ that region less 1 10¹⁸ in range 0.25 µm from layer. (0.53 1). efficiency injection into increased has small threshold value excellent high-speed characteristic can provided.
lens.org 参考文章(3)
J. Bowers, B. Hemenway, A. Gnauck, D. Wilt, High-speed InGaAsP constricted-mesa lasers IEEE Journal of Quantum Electronics. ,vol. 22, pp. 833- 844 ,(1986) , 10.1109/JQE.1986.1073043
T. Tanbun‐Ek, R. A. Logan, N. A. Olsson, H. Temkin, A. M. Sergent, K. W. Wecht, High power output 1.48–1.51 μm continuously graded index separate confinement strained quantum well lasers Applied Physics Letters. ,vol. 57, pp. 224- 226 ,(1990) , 10.1063/1.103722
Y. Hirayama, H. Furuyama, M. Morinaga, N. Suzuki, M. Kushibe, K. Eguchi, M. Nakamura, High-speed 1.5 mu m self-aligned constricted mesa DFB lasers grown entirely by MOCVD IEEE Journal of Quantum Electronics. ,vol. 25, pp. 1320- 1323 ,(1989) , 10.1109/3.29263