Metal organic vapor phase epitaxial growth of group III-V semiconductor materials
作者： Thomas F. Kuech , Michael A. Tischler
DOI:
关键词:
摘要: This invention is directed to a method of epitaxial growth by metal organic vapor phase epitaxy (MOVPE) Group III-V compound semiconductors in hot wall reactor. Epitaxy accomplished use precursors having metal, an ligand, and inorganic ligand. The system operated at very low pressures provide high throughput wafers highly uniform deposition growth. further the class selectively grow compounds on masked substrate, wherein occurs epitaxially exposed areas substrate but not surrounding mask.
lens.org 参考文章(15)
Richard E. Mccullough, Jack P. Salerno, Jhang Woo Lee, Selective omcvd growth of compound semiconductor materials on silicon substrates ,(1988)
C. Ghosh, R. L. Layman, Selective area growth of gallium arsenide by metalorganic vapor phase epitaxy Applied Physics Letters. ,vol. 45, pp. 1229- 1231 ,(1984) , 10.1063/1.95073
Stephen H. Jones, Kei May Lau, Selective Area Growth of High Quality GaAs by OMCVD Using Native Oxide Masks Journal of The Electrochemical Society. ,vol. 134, pp. 3149- 3155 ,(1987) , 10.1149/1.2100360
Yoshiro Nakayama, Shinji Ohkawa, Hisao Hashimoto, Hajime Ishikawa, Submicron GaAs Epitaxial Layer from Diethylgalliumchloride and Arsine Journal of The Electrochemical Society. ,vol. 123, pp. 1227- 1231 ,(1976) , 10.1149/1.2133040
Chiaki Sasaoka, Masaji Yoshida, Akira Usui, Atomic Layer Epitaxy of GaAs Using Solid Arsenic and DEGaCl Japanese Journal of Applied Physics. ,vol. 27, pp. L490- L492 ,(1988) , 10.1143/JJAP.27.L490
H. Heinecke, A. Brauers, F. Grafahrend, C. Plass, N. Pütz, K. Werner, M. Weyers, H. Lüth, P. Balk, Selective growth of GaAs in the MOMBE and MOCVD systems Journal of Crystal Growth. ,vol. 77, pp. 303- 309 ,(1986) , 10.1016/0022-0248(86)90316-7
Masaji Yoshida, Source of carbon contamination in GaAs grown by metalorganic-chloride (Ga(CH3)3/AsCl3/H2) VPE Journal of Crystal Growth. ,vol. 88, pp. 16- 22 ,(1988) , 10.1016/S0022-0248(98)90003-3
K. Kamon, M. Shimazu, K. Kimura, M. Mihara, M. Ishii, Selective growth of AlxGa1−xAs embedded in etched grooves on GaAs by low-pressure OMVPE Journal of Crystal Growth. ,vol. 77, pp. 297- 302 ,(1986) , 10.1016/0022-0248(86)90315-5
Kazuo Mori, Masaji Yoshida, Akira Usui, Hiroshi Terao, GaAs growth by atomic layer epitaxy using diethylgalliumchloride Applied Physics Letters. ,vol. 52, pp. 27- 29 ,(1988) , 10.1063/1.99306
K. Lindeke, W. Sack, J. J. Nickl, Gallium Diethyl Chloride: A New Substance in the Preparation of Epitaxial Gallium Arsenide Journal of The Electrochemical Society. ,vol. 117, pp. 1316- 1318 ,(1970) , 10.1149/1.2407300