作者: Shinya Kano , Yasuo Azuma , Daisuke Tanaka , Masanori Sakamoto , Toshiharu Teranishi
DOI: 10.1063/1.4847955
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摘要: We have studied random telegraph signals (RTSs) in a chemically assembled single-electron transistor (SET) at temperatures as low 300 mK. The RTSs the SET were investigated by measuring source–drain current, using histogram of RTS dwell time, and calculating power spectrum density drain current–time characteristics. It was found that time dependent on voltage SET, but independent gate voltage. Considering spatial structure origin is attributed to trapped charges an alkanethiol-protected Au nanoparticle positioned near SET. These results are important they will help realize stable SETs practical applications.