Temperature dependent resistance and cryogenic microwave spectroscopy of Au decorated silicon nanowires

摘要: We investigate the electrical transport properties of silicon nanowire arrays grown by Au catalyzed chemical vapor deposition, resulting in prominent nanoparticle sidewall decoration. dc measurements show symmetric nonlinear I-V characteristics with a zero field conductivity temperature dependence consistent nearest neighbor hopping. The characteristic energy for this is similar to expected charging nanoparticles. measured resistance also dependent on bias voltage history if large electric fields are applied. Random telegraph noise events at low indicate that dominated small number electrons confined single array. With fixed bias, can be influenced indirectly coupled microwave radiation temperature. This results high quality factor resonant features, indicating significant excitation lifetimes. origin these reso...