Electrical properties of nominally undoped silicon nanowires grown by molecular-beam epitaxy
作者： Jan Bauer , Frank Fleischer , Otwin Breitenstein , Luise Schubert , Peter Werner
DOI: 10.1063/1.2428402
关键词: Epitaxy 、 Nanowire 、 Vapor–liquid–solid method 、 Optoelectronics 、 Molecular beam epitaxy 、 Scanning electron microscope 、 Materials science 、 Electron beam-induced current 、 Electrical resistivity and conductivity 、 Silicon
摘要: Single undoped Si nanowires were electrically characterized. The grown by molecular-beam epitaxy on n+ silicon substrates and contacted platinum/iridium tips. I-V curves measured electron beam induced current investigations performed single nanowires. It was found that the have an apparent resistivity of 0.85Ωcm, which is much smaller than expected for conductance explained hopping conductivity at Si–SiO2 interface nanowire surface.
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sci-hub.se 参考文章(14)
Yu Huang, Xiangfeng Duan, Yi Cui, Lincoln J Lauhon, Kyoung-Ha Kim, Charles M Lieber, Logic Gates and Computation from Assembled Nanowire Building Blocks Science. ,vol. 294, pp. 1313- 1317 ,(2001) , 10.1126/SCIENCE.1066192
Volker Schmidt, Heike Riel, Stephan Senz, Siegfried Karg, Walter Riess, Ulrich Gösele, Realization of a silicon nanowire vertical surround-gate field-effect transistor. Small. ,vol. 2, pp. 85- 88 ,(2006) , 10.1002/SMLL.200500181
Linus E. Jensen, Mikael T. Björk, Sören Jeppesen, Ann I. Persson, B. Jonas Ohlsson, Lars Samuelson, Role of surface diffusion in chemical beam epitaxy of InAs nanowires Nano Letters. ,vol. 4, pp. 1961- 1964 ,(2004) , 10.1021/NL048825K
Xiangfeng Duan, Yu Huang, Charles M. Lieber, Nonvolatile Memory and Programmable Logic from Molecule-Gated Nanowires Nano Letters. ,vol. 2, pp. 487- 490 ,(2002) , 10.1021/NL025532N
L. Libioulle, Y. Houbion, J.‐M. Gilles, VERY SHARP PLATINUM TIPS FOR SCANNING TUNNELING MICROSCOPY Review of Scientific Instruments. ,vol. 66, pp. 97- 100 ,(1995) , 10.1063/1.1146153
J. B. Hannon, S. Kodambaka, F. M. Ross, R. M. Tromp, The influence of the surface migration of gold on the growth of silicon nanowires Nature. ,vol. 440, pp. 69- 71 ,(2006) , 10.1038/NATURE04574
Jie Chen, R. Könenkamp, Vertical nanowire transistor in flexible polymer foil Applied Physics Letters. ,vol. 82, pp. 4782- 4784 ,(2003) , 10.1063/1.1587258
L. Schubert, P. Werner, N. D. Zakharov, G. Gerth, F. M. Kolb, L. Long, U. Gösele, T. Y. Tan, Silicon nanowhiskers grown on 〈111〉Si substrates by molecular-beam epitaxy Applied Physics Letters. ,vol. 84, pp. 4968- 4970 ,(2004) , 10.1063/1.1762701
V P Parkhutik, V I Shershulskii, The modelling of DC conductivity of thin disorder dielectrics Journal of Physics D. ,vol. 19, pp. 623- 641 ,(1986) , 10.1088/0022-3727/19/4/016
Ulrich Gösele, How clean is too clean? Nature. ,vol. 440, pp. 34- 35 ,(2006) , 10.1038/440034A