作者: B. Zhang , Y. Tian , J. X. Zhang , W. Cai
DOI: 10.1007/S10853-010-5021-3
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摘要: Thin films of SnO2:F were prepared by ultrasonic spray pyrolysis method. The effect fluorine concentration on the structural, optical, and electrical properties was investigated. X-ray diffraction results showed preferred growth along (110). FTIR employed to study defects in SnO2 lattice. evidence oxygen vacancy substitution for It found that at low doping levels, ions replace While beyond a certain level, started occupy interstitial site, which had negative carrier that, turn, affected infrared reflectivity films. increased disorder high levels also shown FTIR. discussion scattering suggested ionized impurity and/or neutral dominant mechanisms