Influence of substrate temperature on the processing of CdTe and CdS thin films

摘要: The structural and radiative defect states resulting from thin film CdTe/CdS deposited onto different temperature (from ambient to 250C) glass substrates have been investigated. Samples represent the as-deposited treated ones. Treatments include annealing at 400C for 30 min, dipping into a bath of saturated solution (at standard pressure conditions) 5 s finally another cycle heat treatment, in open air. Measurements were done by three complementary techniques, namely Rutherford backscattering (RBS), photoluminescence (PL) thermoluminescence (TL). Structural variations sought RBS while information about both trap was determined PL TL techniques. All methods gave consistent results, which indicate structure formation shallow deeper that are function preparation conditions. emission spectra samples reveal changes maximum intensity correlated with relative magnitudes excitonic emissions detected asymmetric broad band centred 1.43 eV. glow curves, on other hand, presence new trapping 75, 135 205C. Changes concentration relatively levels 290C 385C noted. newly formed defects absent prior treatment due chlorine incorporation, surface region depletion species interdiffusion. depth (activation energy) before after kinetic analysis using total curve deconvolution.