44TRANSISTOR STATIC MEMORY CELL
作者： Takagi Shigeru
DOI:
关键词:
摘要: PURPOSE:To make perfect the holding of memory contents by constituting a cell with four C-MOSFETs and suitably determining reverse bias leakage current PN junction each FET.
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作者： Takagi Shigeru
DOI:
关键词:
摘要: PURPOSE:To make perfect the holding of memory contents by constituting a cell with four C-MOSFETs and suitably determining reverse bias leakage current PN junction each FET.