Protonic transistors from thin reflectin films
作者： David D. Ordinario , Long Phan , Jonah-Micah Jocson , Tam Nguyen , Alon A. Gorodetsky
DOI: 10.1063/1.4901296
关键词:
摘要: … H+ 0 is the proton concentration at a gate bias of 0 V, V GS is the gate voltage, C GS is the gate capacitance, e is the charge of the proton, and t is the thickness of the active layer. 13. C. …
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