作者: Lixia Zhao , Lixia Zhao , Xiaodong Li , Shan Lin , Zhanhong Ma
DOI: 10.1016/J.IJHYDENE.2020.11.277
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摘要: Abstract Ordered nanoporous structures are promising for multifunctional devices and systems. Here, we demonstrate the controllable layer-ordered porous GaN using selective electrochemical etching of n-GaN layers from n-GaN/u-GaN multilayers. The shape can be modulated to dome-shaped or triangular by changing solution. Compared with corresponding planar GaN, photocurrent increases ~2.7 times in photocatalytic water splitting process. enhanced performance is mainly attributed increased specific surface area modulation electric fields incident light as simulated finite-difference time-domain method. This approach help design diversify highly ordered nanostructures III-nitride semiconductor, which lays a foundation other optoelectronic applications.