Proton beam induced luminescence of silicon dioxide implanted with silicon
作者： Grzegorz Gawlik , Jacek Jagielski , Anna Stonert , Renata Ratajczak
DOI: 10.1016/J.NIMB.2009.05.046
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摘要: Abstract Light emission from a silicon dioxide layer enriched with has been studied. Samples used had structures made on thermally oxidized substrate wafers. Excess atoms were introduced into 250-nm-thick via implantation of 60 keV Si+ ions up to fluence 2 × 1017 cm−2. A 15-nm-thick Au was as top semitransparent electrode. Continuous blue light observed under DC polarization the structure at 8–12 MV/cm. The also in an ionoluminescence experiment, which caused by irradiation H2+ ion beam energy between 22 and 100 keV. In case H2+, entering material dissociated two protons, each carrying average half incident energy. spectra emitted dependence proton analyzed results correlated concentration profile implanted atoms.
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