Analysis using high energy beam techniques of the surface carbonaceous layers of silicon and tantalum substrates used in the chemical vapour deposition synthesis of diamond
作者： M.L. Terranova , V. Sessa , V. Rigato , F. Caccavale
DOI: 10.1016/0925-9635(93)90186-6
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摘要: Abstract Data on the elemental composition and thickness of carbonaceous layers generated during hot-filament chemical vapour deposition diamond Si(100) polycrystalline tantalum substrates were gathered by combined use Rutherford backscattering spectrometry (RBS) carried out with 1 H + 4 He beams nuclear reaction analysis employing 12 C(d,p) 13 C reaction. Determination layer thicknesses required RBS secondary ion mass spectroscopy in depth profiling mode. The total amount carbon deposited onto was found to depend process temperature, following different trends for silicon tantalum. amounts hydrogen oxygen incorporated deposits measured reactions H( 15 N,α γ) 16 O(d,p) 17 O∗ respectively, results correlated layers.
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