A High-Voltage Series-Stacked IGBT Switch With Active Energy Recovery Feature for Pulsed Power Applications

摘要: Applying series configuration of the insulated gate bipolar transistors (IGBTs) to pulsed power supplies offers unique features such as compactness and long life time. In high-voltage supplies, a large number IGBTs are required be serially connected. Hence, safe operating condition provision for is an important crucial issue. The effect voltage unbalancing factors becomes remarkable when switches in structure increases. There passive active methods balance IGBTs. both these methods, amount must dissipated remove factors. Consequently, loss considerable devices necessary. This paper proposes effective recovery system that recovers associated with stacking Using this proposal, efficiency resulted switch enhances considerably. can implemented easily any It consists simple dc–dc converter several interconnection diodes procedure. Proper performance proposed evaluated by aid simulations experiments.