作者: L. Mariucci , S. Cipolloni , D. Simeone , M. Cuscuna , L. Maiolo
DOI: 10.3938/JKPS.54.505
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摘要: We have analyzed the hysteresis of transfer characteristics pentacene thin-film transistors (TFTs) measured under different environmental conditions (vacuum, oxygen, dry nitrogen, air and nitrogen with relative humidities). The results showed that, whereas in atmospheres are quite stable, increases percentage moisture, indicating that adsorbed water is main cause instability TFTs. In addition, transient current experiments been carried out air. Through these measurements, we able to evaluate a characteristic time drain reduction several seconds. These indicate not simply related charge trapping localized gap states slower phenomena should also be considered.