Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade

摘要: Abstract Pixel sensors based on commercial high-voltage CMOS processes are an exciting technology that is considered as option for the outer layer of ATLAS inner tracker upgrade at High Luminosity LHC. Here, charged particles detected using deep n-wells sensor diodes with depleted region extending into silicon bulk. Both analog and digital readout electronics can be added to achieve different levels integration up a fully monolithic sensor. Small scale prototypes ams have previously demonstrated it required radiation tolerance 10 15 n eq /cm2 detection efficiencies above 99.5%. Recently, large area prototypes, comparable in size full sensor, been produced include most features towards final design: H35demo prototype H35 supports both external integrated ATLASPix1 pre-production design aH18 technology. chips fill-factor pixel designs, but differ structure. Performance results H35DEMO capacitively-coupled first shown.