Characterisation of AMS H35 HV-CMOS monolithic active pixel sensor prototypes for HEP applications

摘要: Monolithic Active Pixel Sensors (MAPS) produced in High Voltage CMOS (HV-CMOS) technology are being considered for Energy Physics applications due to the ease of production and reduced costs. Such is especially appealing when large areas be covered material budget concerned. This case outermost pixel layers future ATLAS tracking detector Luminosity LHC. For experiments at hadron colliders, radiation hardness a key requirement which not fulfilled by standard sensor designs that collect charge diffusion. issue has been addressed depleted active sensors electronics embedded into deep implantation ensuring uniform collection drift. Very first small prototypes hybrid have already shown compatible with requirements. Nevertheless, compete present solutions further reduction costs achievable fully monolithic design desirable. The H35DEMO electrode full reticle demonstrator chip AMS 350 nm HV-CMOS collaboration Karlsruher Institut fur Technologie (KIT), de F'isica d'Altes Energies (IFAE), University Liverpool Geneva. It includes two matrices can operated standalone. One these was characterised beam test before after irradiation protons neutrons. Results demonstrated feasibility producing hard area technology. chips substrate resistivity 200 Ωcm} irradiated neutrons showed up fluence 1×1015 neq/cm2 hit efficiency about 99% noise occupancy lower than 10-6 hits LHC bunch crossing 25 ns 150 V.