Analysis of phase-separation region in wurtzite group III nitride quaternary material system using modified valence force field model

摘要: Abstract The group III (B, Al, Ga, In) nitride quaternary alloy systems are potentially useful for ultraviolet, blue, and green light-emitting devices, or high-temperature, high-power, high-frequency electronic devices. There have been significant challenges to the epitaxial growth of these alloys we investigated unstable mixing region in phase field. existence an is predicted based on a strictly regular solution model. interaction parameter used our model analytically obtained by valence force field modified wurtzite structures. From calculations, among systems, find that InGaAlN system has narrowest region, BInAlN widest region. calculated parameters which important predict agree well with best-fit line experimental results various systems.