作者: Ya.G Ponomarev , E.B Tsokur , M.V Sudakova , S.N Tchesnokov , M.E Shabalin
DOI: 10.1016/S0038-1098(99)00168-4
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摘要: A reproducible fine structure at subgap voltages in the I(U)-characteristics of Bi2Sr2CaCu2O8 break junctions has been observed and investigated. The is detectable only presence an a.c. Josephson current. position dips, composing dI/dU-characteristics, independent gap parameter Δ, temperature T geometry contacts. overall form good agreement with Raman scattering spectra phonon modes this material. We attribute to inelastic (phonon assisted) tunneling Cooper pairs, which accompanied by emission coherent Raman-active optical phonons resonance Ures=ℏωphon/2e. These results hint for strong electron–phonon interaction